[Samsung Unveils Next-Generation Memory Strategy: HBM5 Performance Target to Double That of HBM4E] According to a report by ETNews on September 1, Samsung Electronics plans to enhance the performance of its next-generation high-bandwidth memory (HBM), HBM5, to double that of HBM4E. The subsequent generation product, zHBM, aims for a performance target eight times that of HBM4E. Samsung will focus on 3D structural innovation as the core to compete for dominance in the next-generation memory market. To address the large-capacity memory demands required by large language models (LLM), Samsung is also advancing the development of zNAND-O. The goal for zNAND-O is to achieve a bit density 10 times that of DRAM while increasing read bandwidth and energy efficiency to 7 times that of NAND. Samsung plans to begin supplying zNAND-O samples in 2028.